KSMD60N03L n-channel logic level mosfets 30v, 30a, 0.023 w general description this device employs advanced mosfet technology and features low gate charge while maintaining low on- resistance. optimized for switching applications, this device improves the overall efficiency of dc/dc converters and allows operation to higher switching frequencies. applications ? dc/dc converters features ? fast switching ? r ds(on) = 0.014 w (typ), v gs = 10v ? r ds(on) = 0.024 w (typ), v gs = 4.5v ? q g (typ) = 9.6nc, v gs = 5v ? q gd (typ) = 3.4nc ? c iss (typ) = 900pf mosfet maximum ratings t c =25c unless otherwise noted thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain to source voltage 30 v v gs gate to source voltage 20 v i d drain current 30 a continuous (t c = 25 o c, v gs = 10 v ) continuous (t c = 100 o c, v gs = 4.5 v ) 19 a continuous (t c = 25 o c, v gs = 10 v , r q ja = 52 o c/w) 7.9 a pulsed figure 4 a p d power dissipation derate above 25 o c 45 0.37 w w/ o c t j , t stg operating and storage temperature -55 to 150 o c r q jc thermal resistance junction to case to-252 2.73 o c/w r q ja thermal resistance junction to ambient to-252 100 o c/w r q ja thermal resistance junction to ambient to-252, 1in 2 copper pad area 52 o c/w device marking device package reel size tape width quantity KSMD60N03L KSMD60N03L to-252aa 330mm 16mm 2500 units d g s to-252aa 2014-7-7 1 www.kersemi.com
t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics (v gs = 4.5v) switching characteristics (v gs = 10v) unclamped inductive switching drain-source diode characteristics symbol parameter test conditions min typ max units b v dss drain to source breakdown voltage i d = 250 m a, v gs = 0v 30 - - v i dss zero gate voltage drain current v ds = 25v - - 1 m a v gs = 0v t c = 125 o c - - 250 i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 m a 1 - 3 v r ds(on) drain to source on resistance i d = 30a, v gs = 10v - 0.014 0.023 w i d = 19a, v gs = 4.5v - 0.024 0.030 c iss input capacitance v ds = 15v, v gs = 0v, f = 1mhz - 900 - pf c oss output capacitance - 210 - pf c rss reverse transfer capacitance - 90 - pf q g(tot) total gate charge at 10v v gs = 0v to 10v v dd = 15v i d = 19a i g = 1.0ma - 18 28 nc q g(5) total gate charge at 5v v gs = 0v to 5v - 9.6 14 nc q g(th) threshold gate charge v gs = 0v to 1v - 1.0 1.5 nc q gs gate to source gate charge - 3.4 - nc q gd gate to drain ?miller? charge - 3.4 - nc t on turn-on time v dd = 15v, i d = 7.9a v gs = 4. 5v, r gs = 18 w - - 90 ns t d(on) turn-on delay time - 11 - ns t r rise time - 49 - ns t d(off) turn-off delay time - 27 - ns t f fall time - 28 - ns t off turn-off time - - 83 ns t on turn-on time v dd = 15v, i d = 7.9a v gs = 10 v, r gs = 18 w - - 48 ns t d(on) turn-on delay time - 6 - ns t r rise time - 26 - ns t d(off) turn-off delay time - 52 - ns t f fall time - 28 - ns t off turn-off time - - 120 ns t av avalanche time i d = 2.7 a, 3.0 mh 180 - - m s v sd source to drain diode voltage i sd = 19a - - 1.25 v i sd = 10a - - 1.0 v t rr reverse recovery time i sd = 19a, di sd /dt = 100a/ m s - - 58 ns q rr reverse recovered charge i sd = 19a, di sd /dt = 100a/ m s - - 70 nc electrical characteristics KSMD60N03L 2014-7-7 2 www.kersemi.com
typical characteristic figure 1. normalized power dissipation vs ambient temperature figure 2. maximum continuous drain current vs case temperature figure 3. normalized maximum transient thermal impedance figure 4. peak current capability t a , ambient temperature ( o c) p o w e r d i s s i p a t i o n m u l t i p l i e r 0 0 25 50 75 100 150 0.2 0.4 0.6 0.8 1.0 1.2 125 i d , d r a i n c u r r e n t ( a ) t c , case temperature ( o c) 0 10 20 30 40 25 50 75 100 125 150 v gs = 10v v gs = 4.5v 0.1 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 2 t, rectangular pulse duration (s) z q j c , n o r m a l i z e d t h e r m a l i m p e d a n c e notes: duty factor: d = t 1 /t 2 peak t j = p dm x z q jc x r q jc + t c p dm t 1 t 2 0.5 0.2 0.1 0.05 0.01 0.02 duty cycle - descending order single pulse i d m , p e a k c u r r e n t ( a ) t, pulse width (s) 20 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 500 t c = 25 o c i = i 25 150 - t c 125 for temperatures above 25 o c derate peak current as follows: transconductance may limit current in this region v gs = 10v v gs = 5v 100 KSMD60N03L 2014-7-7 3 www.kersemi.com
figure 5. transfer characteristics figure 6. saturation characteristics figure 7. drain to source on resistance vs gate voltage and drain current figure 8. normalized drain to source on resistance vs junction temperature figure 9. normalized gate threshold voltage vs junction temperature figure 10. normalized drain to source breakdown voltage vs junction temperature typical characteristic (continued) 0 20 40 60 1 2 3 4 5 i d , d r a i n c u r r e n t ( a ) v gs , gate to source voltage (v) t j = -55 o c t j = 150 o c t j = 25 o c 0 20 40 60 0 0.5 1.0 1.5 2.0 2.5 i d , d r a i n c u r r e n t ( a ) v ds , drain to source voltage (v) v gs = 4.5v v gs = 10v v gs = 3.5v v gs = 3.0v pulse duration = 80 m s duty cycle = 0.5% max t c = 25 o c 10 20 30 40 50 2 4 6 8 10 i d = 7.9a v gs , gate to source voltage (v) r d s ( o n ) , d r a i n t o s o u r c e o n r e s i s t a n c e ( m w ) pulse duration = 80 m s duty cycle = 0.5% max i d = 30a 0.5 1.0 1.5 2.0 -80 -40 0 40 80 120 160 n o r m a l i z e d d r a i n t o s o u r c e t j , junction temperature ( o c) o n r e s i s t a n c e v gs = 10v, i d = 30a pulse duration = 80 m s duty cycle = 0.5% max 0.4 0.6 0.8 1.0 1.2 1.4 -80 -40 0 40 80 120 160 n o r m a l i z e d g a t e t j , junction temperature ( o c) t h r e s h o l d v o l t a g e v gs = v ds , i d = 250 m a 0.9 1.0 1.1 1.2 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) n o r m a l i z e d d r a i n t o s o u r c e b r e a k d o w n v o l t a g e i d = 250 m a KSMD60N03L 2014-7-7 4 www.kersemi.com
figure 11. capacitance vs drain to source voltage figure 12. gate charge waveforms for constant gate currents figure 13. switching time vs gate resistance figure 14. switching time vs gate resistance typical characteristic (continued) 100 1000 0.1 1 10 30 70 2000 c , c a p a c i t a n c e ( p f ) v ds , drain to source voltage (v) v gs = 0v, f = 1mhz c iss = c gs + c gd c oss @ c gs + c gd c rss = c gd 0 2 4 6 8 10 0 3 6 9 12 15 v g s , g a t e t o s o u r c e v o l t a g e ( v ) q g , gate charge (nc) v dd = 15v i d = 30a i d = 15a waveforms in descending order: 0 20 40 60 80 100 0 10 20 30 40 50 s w i t c h i n g t i m e ( n s ) r gs , gate to source resistance ( w ) v gs = 4.5v, v dd = 15v, i d = 7.9a t d(off) t r t f t d(on) s w i t c h i n g t i m e ( n s ) r gs , gate to source resistance ( w ) v gs = 10v, v dd = 15v, i d = 7.9a t d(off) t r t d(on) t f 0 20 40 60 80 100 120 140 0 10 20 30 40 50 test circuits and waveforms figure 15. unclamped energy test circuit figure 16. unclamped energy waveforms t p v gs 0.01 w l i as + - v ds v dd r g dut vary t p to obtain required peak i as 0v v dd v ds bv dss t p i as t av 0 KSMD60N03L 2014-7-7 5 www.kersemi.com
figure 17. gate charge test circuit figure 18. gate charge waveforms figure 19. switching time test circuit figure 20. switching time waveforms test circuits and waveforms (continued) r l v gs + - v ds v dd dut i g(ref) v dd q g(th) v gs = 1v q g(5) v gs = 5v q g(tot) v gs = 10v v ds v gs i g(ref) 0 0 q gs q gd v gs r l r gs dut + - v dd v ds v gs t on t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs 0 0 KSMD60N03L 2014-7-7 6 www.kersemi.com
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